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| STP38N06 N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR PRELIMINARY DATA TYPE ST P38N06 s s s s s s s s V DSS 60 V R DS(on) < 0.03 ID 38 A (*) TYPICAL RDS(on) = 0.026 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE HIGH dV/dt RUGGEDNESS APPLICATION ORIENTED CHARACTERIZATION 1 2 3 TO-220 APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s POWER MOTOR CONTROL s DC-DC & DC-AC CONVERTERS s SYNCRONOUS RECTIFICATION INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V DS VDGR V GS ID ID I DM (*) P t ot dV/dt(1 ) T stg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating Factor Peak Diode Recovery voltage slope St orage Temperature Max. Operating Junction Temperature o o o Value 60 60 20 38 26 152 90 0.6 7 -65 to 175 175 Uni t V V V A A A W W/ o C V/ ns o o C C (*) Pulse width limited by safe operating area March 1996 1/11 STP38N06 THERMAL DATA R t hj-ca se R t hj- amb R thc- si nk Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead T emperature For Soldering Purpose Max Max Typ 1.66 62.5 0.5 300 o o C/W C/W o C/W o C AVALANCHE CHARACTERISTICS Symb ol I AR E AS E AR I AR Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, < 1%) Single Pulse Avalanche Energy o (starting Tj = 25 C, ID = I AR , V DD = 25 V) Repetitive Avalanche Energy (pulse width limited by Tj max, < 1%) Avalanche Current, Repetitive or Not-Repetitive o (T c = 100 C, pulse width limited by Tj max, < 1%) Max Valu e 38 300 75 26 Unit A mJ mJ A ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symb ol V (BR)DSS I DSS I GSS Parameter Drain-source Breakdown Voltage Test Cond ition s I D = 250 A VGS = 0 Min. 60 250 1000 100 Typ . Max. Un it V A A nA Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating x 0.8 T c = 125 o C Gate-body Leakage Current (V DS = 0) V GS = 20 V ON () Symb ol V GS(th) R DS( on) ID(o n) Parameter Gate T hreshold Voltage V DS = VGS Static Drain-source On Resistance On State Drain Current V GS = 10V V GS = 10V Test Cond ition s ID = 250 A I D = 19 A ID = 19 A T c = 100 o C 38 Min. 2 Typ . 3 0.026 Max. 4 0.03 0.06 Un it V A V DS > I D(on) x R DS(on) max V GS = 10 V DYNAMIC Symb ol g fs () C iss C oss C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Cond ition s V DS > I D(on) x R DS(on) max V DS = 25 V f = 1 MHz I D = 19 A VGS = 0 Min. 14 Typ . 19 2000 350 80 2800 450 120 Max. Un it S pF pF pF 2/11 STP38N06 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symb ol t d(on) tr (di/dt) on Parameter Turn-on T ime Rise Time Turn-on Current Slope Test Cond ition s V DD = 30 V ID = 19 A VGS = 10 V R G = 50 (see test circuit, figure 3) V DD = 48 V ID = 38 A R G = 50 V GS = 10 V (see test circuit, figure 5) V DD = 40 V ID = 38 A V GS = 10 V Min. Typ . 45 280 240 Max. 65 380 Un it ns ns A/s Qg Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge 60 10 20 80 nC nC nC SWITCHING OFF Symb ol t r(Vof f) tf tc Parameter Off-voltage Rise Time Fall T ime Cross-over T ime Test Cond ition s V DD = 48 V I D = 38 A R G = 50 VGS = 10 V (see test circuit, figure 5) Min. Typ . 65 140 230 Max. 85 180 300 Un it ns ns ns SOURCE DRAIN DIODE Symb ol I SD I SDM (*) V SD () t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward O n Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 38 A V GS = 0 85 0.3 7 I SD = 38 A di/dt = 100 A/s o Tj = 150 C V DD = 40 V (see test circuit, figure 5) Test Cond ition s Min. Typ . Max. 38 152 1.5 Un it A A V ns C A () Pulsed: Pulse duration = 300 s, duty cycle 1.5 % (*) Pulse width limited by safe operating area (1) ISD 20 A, di/dt 300 A/s, VDD V(BR)DSS, Tj TJMAX Safe Operating Area Thermal Impedance 3/11 STP38N06 Derating Curve Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage 4/11 STP38N06 Capacitance Variations Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature Turn-on Current Slope Turn-off Drain-source Voltage Slope Cross-over Time 5/11 STP38N06 Switching Safe Operating Area Accidental Overload Area Source-drain Diode Forward Characteristics Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform 6/11 STP38N06 Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And DIode Recovery Times 7/11 STP38N06 PSPICE PARAMETERS SUBCIRCUIT COMPONENTS Symb ol S1 S2 LD LG LS RDRAIN RG ATE CG D CGS ALFA RG N Parameter (V14_16<0) (See Power Mosfet Model Subcircuit) (V16_11<0) (See Power Mosfet Model Subcircuit) Drain Inductance Gate Inductance Source Inductance Drain Resistance Gate Resistance Gate Drain Capacitance Gate Source Capacitance Drift Coeficient Negative Bias Resistance Valu e ON ON 8 10 10 1.9E 1 3.92 1.9 1E -3 -2 Unit nH nH nH nF nF V -1 K 10 DIODE DRAIN GATE (Depletion Capacitance) Symb ol CJO VJ M Parameter Zero Bias p-n Capacitance p-n Potential p-n G rading Coefficient Valu e 2.6 0.1 0.6 Unit nF V DIODE DRAIN SOURCE Symb ol CJO VJ M TT Parameter Zero Bias p-n Capacitance p-n Potential p-n G rading Coefficient Transit Time Valu e 7.8 0.1 0.6 20 nsec Unit nF V N MOSFET Symb ol L W LEVEL TO X VT O U0 THETA Vmax KP Channel Length Channel Width Model Index Oxide Thickness Zero Bias Threshold Voltage Surface Mobility Mobility Modulation Maximum Drift Velocity Trans Conductance Coefficient Parameter Valu e 1 1 3 1 3.25 600 0.005 0 28 Meter V cm /VS V -1 Meter/sec Amp/V 2 2 Unit Meter Meter For Transient Simulation Applicate U.I.C. (Use Initial Condition) Option 8/11 STP38N06 PSPICE NETLIST OF THE SUBCIRCUIT .SUBCKT STP38N06 1 2 3 *VALUE OF THE PACKAG E INDUCTANCES LS 1 11 10n LG 2 12 10n LD 3 13 7n *RESISTA NCE O F T HE G AT E POLYSILICON RG 12 16 1 *EPY AND DRIF T RESISTANCES RD 13 14 1.9e-02 EDRI 14 15 POLY(2) (13 14) (13 11) 0 0 0 0 1e-3 *CAPACITANCE G ATE SO URCE CGS 16 11 1.90n *OPT IO NAL FO R NEGAT IVE GATE BIAS *S2 51 11 11 16 SWITCH *CGN 51 16 3.92n *RGN 51 16 10k *MILLER CAPACITANCE CGD 16 17 3.92n * DEPLET ION CAPACIT ANCE DGD 17 14 DGD S1 17 14 16 14 SW ITCH .MODEL DGD D +IS= +CJO =2.6n +Vj=.1 +M=.6 .MODEL SWITCH VSW IT CH +RON=1m +ROF F=1MEG +VON=0.1 * OUTPUT CAPACITANCE AND BODY DRAIN DIODE DBD 11 14 DBD .MODEL DBD D +TT=20n +CJO =7.8n +VJ=.1 +M=.6 * MO DEL OF THE MO SF ET MMAI N 15 16 11 11 MMAIN L=1u W =1u .MODEL MMAIN NMO S +LEVEL=3 +TOX=1 +VTO =3.25 +uo=600 +THETA=0.005 +VMAX=5e7 +KP=28 .ENDS Power Mosfet Model Subcircuit 9/11 STP38N06 TO-220 MECHANICAL DATA DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 E mm TYP. MAX. 4.60 1.32 2.72 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 MIN. 0.173 0.048 0.094 4.40 1.23 2.40 inch TYP. MAX. 0.181 0.051 0.107 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 0.645 0.551 0.116 0.620 0.260 0.154 0.151 A C D1 L2 F1 D G1 Dia. F2 F L5 L7 L6 L9 L4 G 10/11 H2 P011C STP38N06 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersede and replaces all information previously supplied. s SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1995 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 11/11 |
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